@article {D'Acapito2016311,
	title = {Role of Sb dopant in Ag:GeSx-based conducting bridge random access memories},
	journal = {Physica Status Solidi (A) Applications and Materials Science},
	volume = {213},
	number = {2},
	year = {2016},
	note = {cited By 1},
	pages = {311-315},
	doi = {10.1002/pssa.201532383},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84958190943&partnerID=40&md5=64655494de0e02aa42c0364e3ab25ef9},
	author = {D'Acapito, F. and Souchier, E. and Noé, P. and Blaise, P. and Bernard, M. and Jousseaume, V.}
}
