@inbook {francescodacapito2014,
	title = {Group III–V and II–VI Nanowires},
	booktitle = {X-ray Absorption spectroscopy of semiconductors},
	year = {2014},
	pages = {269–286},
	publisher = {Springer Berlin Heidelberg},
	organization = {Springer Berlin Heidelberg},
	address = {Heidelberg},
	abstract = {In this contribution a review on the studies based on X-ray absorption spectroscopy (XAS) on III-V and II-VI nanowires in the recent years is presented. Examples of structural characterization of several systems like pure semiconductors (mainly ZnO, ZnS, GaN) and doped materials (with transition metals Co, Mn, Fe and rare earth ions Eu, Er) are presented. XAS in the various cases has played a major role in explaining the observed physical properties or to validate new production routes. Advanced data collection and analysis methods like micro-XAS, site selective XAS via optical emission, comparison between XAS and results of structural modeling have demonstrated to be valuable tools for a more complete understanding of the XAS data.},
	isbn = {978-3-662-44361-3},
	doi = {10.1007/978-3-662-44362-0_13},
	author = {d’Acapito, Francesco},
	editor = {Schnohr, Claudia S. and Ridgway, Mark C.}
}
