@article {Herpers2014a,
	title = {Spectroscopic Proof of the Correlation between Redox-State and Charge-Carrier Transport at the Interface of Resistively Switching Ti/PCMO Devices},
	journal = {Advanced materials (Weinh., Print)},
	volume = {26},
	year = {2014},
	pages = {2730–2735},
	publisher = {Wiley-VCH},
	address = {Weinheim},
	abstract = {By using hard X-ray photoelectron spectroscopy experimentally, proof is provided that resistive switching in Ti/Pr0.48Ca0.52MnO3 (PCMO) devices is based on a redox-process that mainly occurs on the Ti-side. The different resistance states are determined by the amount of fully oxidized Ti-ions in the stack, implying a reversible redox-reaction at the interface, which governs the formation and shortening of an insulating tunnel barrier.},
	keywords = {BEHAVIOR, FILMS, HAXPES, MEMORIES, MIXED-VALENCE MANGANITES, PCMO, PERFORMANCE, redox-reaction, resistive switching, RRAM, TRANSITION},
	issn = {0935-9648},
	doi = {10.1002/adma.201304054},
	author = {Herpers, Anja and Lenser, Christian and Park, Chanwoo and Offi, Francesco and Borgatti, Francesco and Panaccione, Giancarlo and Menzel, Stephan and Waser, Rainer and Dittmann, Regina}
}
