@article {FabrizioOrlando(1);PaoloLacovig(2);LucaOmiciuolo(1);NicoletaG.Apostol(22014,
	title = {Epitaxial growth of a single-domain hexagonal boron nitride monolayer},
	journal = {ACS nano},
	volume = {8},
	year = {2014},
	note = {Publication Date (Web): November 12, 2014.},
	pages = {12063–12070},
	publisher = {American Chemical Society},
	address = {Washington, DC},
	abstract = {We investigate the structure of epitaxially grown hexagonal boron nitride (h-BN) on Ir(111) by chemical vapor deposition of borazine. Using photoelectron diffraction spectroscopy, we unambiguously show that a single-domain h-BN monolayer can be synthesized by a cyclic dose of high-purity borazine onto the metal substrate at room temperature followed by annealing at T = 1270 K, this method giving rise to a diffraction pattern with 3-fold symmetry. In contrast, high-temperature borazine deposition (T = 1070 K) results in a h-BN monolayer formed by domains with opposite orientation and characterized by a 6-fold symmetric diffraction pattern. We identify the thermal energy and the binding energy difference between fcc and hcp seeds as key parameters in controlling the alignment of the growing h-BN clusters during the first stage of the growth, and we further propose structural models for the h-BN monolayer on the Ir(111) surface.},
	keywords = {chemical vapor deposition, hexagonal boron nitride, Ir(111), temperature-programmed growth, X-ray photoelectron diffraction},
	issn = {1936-0851},
	doi = {10.1021/nn5058968},
	url = {http://pubs.acs.org/doi/abs/10.1021/nn5058968},
	author = {Fabrizio Orlando and Paolo Lacovig and Luca Omiciuolo and Nicoleta G. Apostol and Rosanna Larciprete and Alessandro Baraldi and Silvano Lizzit}
}
