@article {Orru2014,
	title = {Formation of axial metal-semiconductor junctions in GaAs nanowires by thermal annealing},
	journal = {Semiconductor Science and Technology},
	volume = {29},
	number = {5},
	year = {2014},
	month = {may},
	pages = {54001–54001},
	publisher = {Iop Publishing Ltd},
	abstract = {We demonstrate the formation of nanoscale axial Schottky contacts in GaAs nanowires by thermal annealing of NiGeAu multilayers. Energy dispersive x-ray spectroscopy indicates that in specific annealing conditions a sharply-defined Au-rich phase can be obtained in the vicinity of the metallic contacts. Charge transport characteristics are analyzed for different degrees of diffusion of the Au-rich phase in the wire and indicate that it has a metallic nature. The mechanism behind this local post-growth modification of the nanowire composition and its potential impact on device applications are discussed.},
	keywords = {HETEROSTRUCTURES, QUANTUM DOTS, TRANSISTORS},
	doi = {10.1088/0268-1242/29/5/054001},
	author = {Orru, M. and Rubini, S. and Roddaro, S.}
}
