@article {F.2014a,
	title = {Large thermal biasing of individual gated nanostructures},
	journal = {Nano research (Print)},
	volume = {7},
	year = {2014},
	pages = {1–9},
	publisher = {Tsinghua Press (Hong Kong) Limited ;},
	address = {Beijing},
	abstract = {We demonstrate very large and uniform temperature gradients up to about 1 K every 100 nm, in an architecture which is compatible with the field-effect control of the nanostructure under test. The temperature gradients demonstrated greatly exceed those typically obtainable with standard resistive heaters fabricated on top of the oxide layer. The nanoheating platform is demonstrated in the specific case of a short-nanowire device. [Figure not available: see fulltext.] Â© 2014 Tsinghua University Press and Springer-Verlag Berlin Heidelberg.},
	keywords = {field effect devices, nanowires, thermoelectric and thermomagnetic effects},
	issn = {1998-0124},
	doi = {10.1007/s12274-014-0426-y},
	url = {http://www.scopus.com/inward/record.url?eid=2-s2.0-84899978341&partnerID=q2rCbXpz},
	author = {Roddaro, Stefano and Ercolani, Daniele and Safeen, MianAkif and Rossella, Francesco and Piazza, Vincenzo and Giazotto, Francesco and Sorba, Lucia and Beltram, Fabio}
}
