High Mobility Molecular Beam Epitaxy HM-MBE
Activity home Research Equipment Publications
High Mobility Molecular Beam Epitaxy HM-MBE
Contact person: Giorgio Biasiol
|
|
The High Mobility Molecular Beam Epitaxy is a facility dedicated to the growth of high purity III/V semiconductors in UHV with atomic layer control on compositions and thicknesses. The model is a Veeco Gen II machine with a dedicated design for high mobility, equipped with As (2X), Ga (2X), Al, In effusion cells and Si and C doping sources for growth on 2” GaAs wafers. Grown structures range from high mobility two- dimensional electron systems in GaAs/AlGaAs (with mobilities up to 8.6 X 106 cm2/Vs) and metamorphic In0.75Ga0.25As/ In0.75Al0.25As heterostructures, to photonic structures and self-assembled nanostructures. |
The facility is completed by a variable temperature magneto transport equipment for electrical characterization (T in the 1.5 – 400 K range , magnetic field up to 7 T). The HM-MBE system accomplishes the double function of facility for synthesis of high purity materials and devices open to external users and collaborators, and of providing nanostructured samples for internal research. Areas of application of the materials synthesized in the HM-MBE facility include nanophotonics, coherent transport, biosensors, spintronics, plasmonics, detectors for large infrastructures, surface science
