Interplay between bandwidth-controlled and filling-controlled pressure-induced Mott insulator to metal transition in the molecular compound [Au(Et-thiazdt) 2]

TitleInterplay between bandwidth-controlled and filling-controlled pressure-induced Mott insulator to metal transition in the molecular compound [Au(Et-thiazdt) 2]
Publication TypeJournal Article
Year of Publication2018
AuthorsBrière, B, Caillaux, J, Le Gal, Y, Lorcy, D, Lupi, S, Perucchi, A, Zaghrioui, M, Soret, JC, Sopracase, R, V. Phuoc, T
JournalPhysical Review B
Volume97
URLhttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85040233646&doi=10.1103%2fPhysRevB.97.035101&partnerID=40&md5=fe3f087d1ba01d4eb690a5009de15123
DOI10.1103/PhysRevB.97.035101