Spectroscopic Proof of the Correlation between Redox-State and Charge-Carrier Transport at the Interface of Resistively Switching Ti/PCMO Devices
| Title | Spectroscopic Proof of the Correlation between Redox-State and Charge-Carrier Transport at the Interface of Resistively Switching Ti/PCMO Devices |
| Publication Type | Journal Article |
| Year of Publication | 2014 |
| Authors | Herpers, A, Lenser, C, Park, C, Offi, F, Borgatti, F, Panaccione, G, Menzel, S, Waser, R, Dittmann, R |
| Journal | Advanced materials (Weinh., Print) |
| Volume | 26 |
| Pagination | 2730–2735 |
| ISSN | 0935-9648 |
| Keywords | BEHAVIOR, FILMS, HAXPES, MEMORIES, MIXED-VALENCE MANGANITES, PCMO, PERFORMANCE, redox-reaction, resistive switching, RRAM, TRANSITION |
| Abstract | By using hard X-ray photoelectron spectroscopy experimentally, proof is provided that resistive switching in Ti/Pr0.48Ca0.52MnO3 (PCMO) devices is based on a redox-process that mainly occurs on the Ti-side. The different resistance states are determined by the amount of fully oxidized Ti-ions in the stack, implying a reversible redox-reaction at the interface, which governs the formation and shortening of an insulating tunnel barrier. |
| DOI | 10.1002/adma.201304054 |
