Phonebook Detail

Giorgio Biasiol
photo

Location

Room(s)

MM 117
MM T27A Lab. HMMBE

Telephone(s)

(+39)040375-6439
(+39)040375-6431

Fax

(+39)040226767

Description

My Europass CV (pdf)

Personal Data

Italian citizen
Born in Gorizia, December 12, 1967

Academic Records

1998 PhD in Physics: "Formation mechanisms of low-dimensional semiconductor nanostructures grown by OMCVD on nonplanar substrates."
1992 Italian “Laurea” in Physics

 

Professional experience

  • 12/2001-present: Development Scientist, Laboratorio Nazionale TASC-INFM, Trieste (Italy).
  • 8/1999-11/2001: Post-doc Fellow, Laboratorio Nazionale TASC-INFM, Trieste (Italy).
  • 9/1998-8/1999: Research Associate, Institut de Micro- et Optoélectronique, École Polytechnique Fédérale, Lausanne (Switzerland).
  • 8/1994-9/1998: Graduate student-assistant, Institut de Micro- et Optoélectronique, École Polytechnique Fédérale, Lausanne (Switzerland).
  • 8/1992-7/1994: Research Specialist, Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN (USA).

Awards

Young Author Best Paper Award, 24th International Conference on the Physics of Semiconductors, Jerusalem (Israel), August 2-7, 1998

Main skills

  • Epitaxial growth of semiconductors by Molecular Beam Epitaxy and Metalorganic Chemical Vapor Deposition.
  • Magnetotransport measurements.
  • Scanning Electron and Atomic Force Microscopy.
  • Photoemission and Auger Spectroscopy.
  • X-Ray Diffraction
  • Semiconductor processing by optical photolithography and wet chemical etching

Languages

Italian, mother tongue, fluent English and French

Selected publications

  • D. Sammito, D. De Salvador, P. Zilio, G. Biasiol, T. Ongarello, M. Massari, G. Ruffato, M. Morpurgo, D. Silvestri, G. Maggioni, G. Bovo, M. Gaio and F. Romanato, “Integrated Architecture for the Electrical Detection of Plasmonic Resonances Based on High Electron Mobility Photo-Transistors”, Nanoscale 6, 1390 (2014).
  • N. Paradiso, S. Heun, S. Roddaro, L. Sorba, F. Beltram, G. Biasiol, L. N. Pfeiffer and K. W. West, "Imaging Fractional Incompressible Stripes in Integer Quantum Hall Systems", Phys. Rev. Lett. 108, 246801 (2012).
  • B. Karmakar, D. Venturelli, L. Chirolli, F. Taddei, V. Giovannetti, R. Fazio, S. Roddaro, G. Biasiol, L. Sorba, V. Pellegrini, and F. Beltram, "Controlled coupling of spin-resolved quantum Hall edge states", Phys. Rev. Lett. 107, 236804 (2011).
  • E.V. Deviatov, A. Lorke,G. Biasiol, and L. Sorba, "Energy transport by neutral collective excitations at the quantum Hall edge", Phys. Rev. Lett. 106, 256802 (2011).
  • M. Calic, P. Gallo, M. Felici, K. A. Atlasov, B. Dwir, A. Rudra, G. Biasiol, L. Sorba, G. Tarel, V. Savona and E. Kapon, "Phonon-Mediated Coupling of InGaAs/GaAs Quantum-Dot Excitons to Photonic Crystal Cavities", Phys. Rev. Lett. 106, 227402 (2011).
  • G. Biasiol and S. Heun, "Compositional Mapping of Semiconductor Quantum Dots and Rings", Physics Reports 500, 117 (2011).
  • J. M. Giesbers, U. Zeitler, M. I. Katsnelson, D. Reuter, A. D. Wieck, G. Biasiol, L. Sorba, and J.C. Maan, “Correlation-Induced Single Flux-Quanta Penetration in Quantum Rings”, Nature Physics 6, 173 (2010).
  • S. Roddaro, N. Paradiso, V. Pellegrini, G. Biasiol, L. Sorba, and F. Beltram, "Tuning non-linear charge transport between integer and fractional quantum Hall states ", Phys. Rev. Lett.103, 016802 (2009) (selected for a Viewpoint in Physics 2, 56 (2009)).
  • G. Günter, A. A. Anappara, J. Hees, L. Sorba, G. Biasiol, S. De Liberato, C. Ciuti, A. Tredicucci, A. Leitenstorfer, and R. Huber, “Sub-cycle switch-on of ultrastrong light-matter interaction”, Nature 458, 178 (2009).
  • V. S. Khrapai, A. A. Shashkin, M. G. Trokina, V. T. Dolgopolov, V. Pellegrini, F. Beltram,G. Biasiol and L. Sorba, “Filling factor dependence of the fractional quantum Hall effect gap”, Phys. Rev. Lett. 100, 196805 (2008).
  • V. S. Khrapai, A. A. Shashkin, M. G. Trokina, V. T. Dolgopolov, V. Pellegrini, F. Beltram, G. Biasiol, L. Sorba, “Direct measurements of the gap in the fractional quantum Hall effect”, Phys. Rev. Lett. 99, 086802 (2007).
  • G. Biasiol, S. Heun, G. B. Golinelli, A. Locatelli, T. O. Mentes, F. Z. Guo, C. Hofer, C. Teichert, and L. Sorba, “Surface compositional gradients of InAs/GaAs quantum dots”, Appl. Phys. Lett. 87, 223106 (2005).
  • S. Roddaro, V. Pellegrini, F. Beltram, G. Biasiol, and L. Sorba, “Inter­edge strong­to­weak scattering evolution at a constriction in the fractional quantum Hall regime”, Phys. Rev. Lett. 93, 046801 (2004).
  • D. Dini, R. Köhler, A. Tredicucci, G. Biasiol, L. Sorba, and F. Beltram, “Rabi splitting of intersubband cavity polaritons”, Phys. Rev. Lett. 90, 116401 (2003).
  • S. Roddaro, V. Pellegrini, F. Beltram, G. Biasiol, L. Sorba, R. Raimondi, and G. Vignale, “Nonlinear quasiparticle tunneling between fractional quantum Hall edges”, Phys. Rev. Lett. 90, 046805 (2003).
  • G. Biasiol, A. Gustafsson, K. Leifer, and E. Kapon, “Mechanisms of self-ordering in nonplanar epitaxy of semiconductor nanostructures”, Phys. Rev. B 65, 205306 (2002).
  • G. Biasiol and E. Kapon, “Mechanisms of self-ordering of quantum nanostructures grown on nonplanar surfaces”, Phys. Rev. Lett. 81, 2962 (1998).
  • G. Biasiol, L. Sorba, G. Bratina, R. Nicolini, A. Fanciosi, M. Peressi, S. Baroni, R. Resta, and A. Baldereschi, "Microscopic Capacitors and Neutral Interfaces in III-V/IV/III-V Semiconductor Heterostructures", Phys. Rev. Lett. 69 (8), 1283 (1992).

 


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Ivana Vobornik
photo

Location

Room(s)

Q2 104
Beamline APE @ Elettra

Telephone(s)

(+39)040375-8411 Office
(+39)040375-8966 Beamline
(+39)040375-8075 Beamline

Fax

Description

I am beamline scientist and activity coordinator at the beamline APE (CNR-IOM) that operates within Elettra and NFFA-TS/NFFA-EU facilities.

Researcher identifiers: 

ORCID: https://orcid.org/0000-0001-9957-3535

Researcher ID: A-7461-2011

SCOPUS Author ID: 6603891831

RESEARCH GATE: Ivana Vobornik

Google Scholar: Ivana Vobornik

Scientific interest: Electronic properties of highly correlated electronic systems, graphene, topological insulators, low-dimensional electronic systems, pnictides, transition metal oxides, surfaces, molecular films on solid surfaces; intermolecular interactions and charge reorganization on metal-molecule interfaces; superconductivity, magnetism, metal-insulator transitions.

Technical skills an competences: Photoelectron spectroscopies with conventional and synchrotron radiation sources; ultra-high vacuum (UHV) techniques, UHV compatible surface preparation techniques and thin film deposition; Auger electron spectroscopy; low energy electron diffraction (LEED), Laue X-ray diffraction; resistivity and susceptibility measurements; participation in the construction and commissioning of beamline APE at Elettra synchrotron.

Press/Media:

March 2017: Article in 'Il Piccolo' (daily newspaper of Trieste)

March 2016: Interview on Radio24 "SmartCity"

Press release:

March 2016: "Cnr: nè 2D, nè 3D, la nuova tecnologia starà nel mezzo": corriereuniv.itilcorrieredelweb.blogspot.itlescienze.ititalyNews.itinsalutenews.itmeteoweb.eu

Education:

  • 1999, PhD in physics, Ecole Polytechnique Fédérale de Lausanne, Switzerland (Thesis n. 2070/1999, Thesis advisor: Prof. Giorgio Margaritondo)
  • 1995, BS/MS in physics, University of Sarajevo, Bosnia and Herzegovina (Thesis advisor: Prof. Egvin Girt)

Work experience:

  • Dec. 2001 – present, Researcher, Consiglio Nazionale delle Ricerche (CNR) – Istituro Officina dei Materiali (IOM) (former Istituto Nazionale per la Fisica della Materia (INFM)), TASC Laboratory, Trieste, Italy
  • Nov. 1999 – Nov. 2001. Postdoctoral fellow, TASC National Laboratory, Istituto Nazionale per la Fisica della Materia (INFM), Trieste, Italy
  • Oct. 1995 – Oct. 1999, Teaching and research assistant, Department of Physics, Ecole Polytechnique Fédérale, Lausanne, Switzerland

 


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Silvia Rubini
photo

Location

Room(s)

MM 118

Telephone(s)

(+39)040375-6437
(+39)040375-6433

Fax

Description

Silvia Rubini got her Master Degree  in Physics  in Pavia (Italy) in 1987 and her Ph.D. degree in 1992 at the Lausanne Federal Institute of Technology (EPFL) in Lausanne (Switzerland).

Since 1995 she works with the Material Division at TASC INFM National Laboratory (now IOM CNR) and since 1999 she is in charge of the molecular beam epitaxy (MBE) laboratory.

Her research activity has been mainly devoted to the growth and characterization of semiconductor compounds heterostructures, both III-V and II-VI materials, for electronic and optoelectronic applications. In the last years her attention has been focused to the growth and the physics of semiconductor compounds nanowires.

Silvia Rubini published over 130  publications in international journals.

 


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Davide Benedetti
photo

Location

Room(s)

Q2 T06

Telephone(s)

(+39)040375-6417

Fax

 


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Michele Alagia
photo

Location

Room(s)

MM 134

Telephone(s)

(+39)040375-8418
(+39)040375-8370
(+39)040375-8642

Fax

 


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Giancarlo Panaccione
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Location

Room(s)

Q2 137

Telephone(s)

(+39)040375-8409

Fax

 


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Albano Cossaro
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Location

Room(s)

MM 114

Telephone(s)

(+39)040375-8065
(+39)040375-8286

Fax

 


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Marco Zangrando
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Location

Room(s)

EP P1 002

Telephone(s)

(+39)040375-8831
+393666176915

Fax

 


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Cristina Africh
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Location

Room(s)

MM 132

Telephone(s)

(+39)040375-6443

Fax

Description

 


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Gregor Bavdek
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Location

Room(s)

T1 PT 047
SX

Telephone(s)

(+39)040375-8286 - lab
(+39)040375-8066 - office

Fax

(+39) 040 226767

Description

scientist

 


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