Molecular Beam Epitaxy (MBE) laboratory
Molecular Beam Epitaxy (MBE) laboratory
Contact persons: Silvia Rubini, Alfonso Franciosi
Multichamber UHV system including: |
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The system can grow
• Undoped, n-type and p-type epitaxial layers of (AI, Ga, In)As and diluted nitrides on GaAs
• Undoped and n-tpe (ZnCd)(SeTe) on GaAs
• III-V and II-VI nanowires on GaAs and on Si.