Molecular Beam Epitaxy (MBE) laboratory

Molecular Beam Epitaxy (MBE) laboratory

Contact persons: Silvia Rubini,  Alfonso Franciosi

Multichamber UHV system including:
• two twins Riber 32P molecular beam epitaxy growth chambers for III-V (AI, Ga, In)As an II-VI (Zn, Cd)(Se, Te) semiconductor compounds;
• an analysis chamber for x-ray photoemission spectroscopy (XPS) equipped with a monochromatic Al Ka source (1486,7 eV) , overall resolution 0.9 eV;
• a chamber for the deposition of metals at room temperature.

 

The system can grow
• Undoped, n-type and p-type epitaxial layers of  (AI, Ga, In)As and  diluted nitrides on GaAs
• Undoped and n-tpe (ZnCd)(SeTe) on GaAs
• III-V and II-VI nanowires on GaAs and on Si.